Part Image

IXFP60N25X3 - LITTELFUSE

Description: --

Download IXFP60N25X3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXFP60N25X3 - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXFP60N25X3 Details

  • Manufacturer Part Number:

    IXFP60N25X3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    320 W

  • Pulsed Drain Current-Max (IDM):

    210 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP60N25X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFP60N25X3 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFP60N25X3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the thermal derating curve.
  • The recommended gate drive voltage for the IXFP60N25X3 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating.
  • Yes, you can parallel multiple IXFP60N25X3 devices to increase current handling, but it's crucial to ensure that each device has an identical thermal environment and that the gate drive signals are properly synchronized to prevent uneven current sharing.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXFP60N25X3 Overview

Use the download button to access the IXFP60N25X3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFP6, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFP60N25X3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview