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IXFP6N120P - LITTELFUSE

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IXFP6N120P - LITTELFUSE  - 3D model
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IXFP6N120P Details

  • Manufacturer Part Number:

    IXFP6N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.65

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP6N120P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFP6N120P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFP6N120P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the maximum power dissipation (Pd) of 100W.
  • The recommended gate drive voltage for the IXFP6N120P is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption.
  • Yes, the IXFP6N120P can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.

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IXFP6N120P Overview

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