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IXFT50N85XHV - LITTELFUSE

Description: MOSFET 850V Ultra Junction X-Class Pwr MOSFET

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IXFT50N85XHV Details

  • Manufacturer Part Number:

    IXFT50N85XHV

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.7

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    850 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    116 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    125 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFT50N85XHV Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFT50N85XHV is a TO-220 Full Pack package with a minimum pad size of 120 mils x 140 mils (3.05 mm x 3.56 mm) and a thermal pad size of 100 mils x 100 mils (2.54 mm x 2.54 mm).
  • Yes, the IXFT50N85XHV is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and Miller capacitance to ensure reliable operation.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 1°C/W and a minimum surface area of 1 in² (6.45 cm²). Also, apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K between the device and heat sink.
  • The maximum allowed voltage transient for the IXFT50N85XHV is ± 500 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
  • Yes, you can use multiple IXFT50N85XHV devices in parallel to increase current handling. However, ensure that each device has its own gate drive circuitry and that the devices are properly matched to minimize current imbalance.

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IXFT50N85XHV Overview

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