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IXFX20N120 - LITTELFUSE

Description: IXYS SEMICONDUCTOR - IXFX20N120 - Power MOSFET, HiPerFET, N Channel, 1.2 kV, 20 A, 0.75 ohm, PLUS247, Through Hole

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PCB Footprints
IXFX20N120 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PLUS247
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3D Models
IXFX20N120 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - PLUS247
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IXFX20N120 Details

  • Manufacturer Part Number:

    IXFX20N120

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    PLUS 247, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IXFX20N120 Overview

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