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IXFX48N50Q - LITTELFUSE

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IXFX48N50Q - LITTELFUSE  - 3D model
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IXFX48N50Q Details

  • Manufacturer Part Number:

    IXFX48N50Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFX48N50Q Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFX48N50Q is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While the IXFX48N50Q is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies, and operating it at higher frequencies may lead to reduced performance, increased losses, and potential reliability issues.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of ≤ 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of ≤ 0.1°C/W. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow path.
  • The IXFX48N50Q can withstand voltage transients up to 1.5 times the maximum rated voltage (V CES) for a duration of ≤ 10 μs. However, it's recommended to limit voltage transients to 1.2 times the maximum rated voltage to ensure reliable operation and prevent potential damage to the device.
  • Yes, the IXFX48N50Q can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and potential damage to the devices.

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IXFX48N50Q Overview

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