Part Image

IXFX66N85X - LITTELFUSE

Description: MOSFET N-CH 850V 66A PLUS247-3

Download IXFX66N85X Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXFX66N85X - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXFX66N85X Details

  • Manufacturer Part Number:

    IXFX66N85X

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    850 V

  • Drain Current-Max (ID):

    66 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    142 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1250 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFX66N85X Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFX66N85X is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFX66N85X is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
  • The maximum allowed case temperature for the IXFX66N85X is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to prevent thermal runaway.
  • Yes, you can parallel multiple IXFX66N85X devices to increase current handling, but it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXFX66N85X Overview

Use the download button to access the IXFX66N85X 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFX6, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFX66N85X

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview