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IXTA08N100D2-TRL - LITTELFUSE

Description: Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK T/R

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IXTA08N100D2-TRL - LITTELFUSE PCB footprint - Other - Other - IXTA08N100D2-TRL-2
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IXTA08N100D2-TRL Details

  • Manufacturer Part Number:

    IXTA08N100D2-TRL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6.5 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA08N100D2-TRL Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA08N100D2-TRL can be found in the Littelfuse application note AN9313, which provides a detailed layout and land pattern recommendation for this device.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink or PCB.
  • Yes, the IXTA08N100D2-TRL can be used in a parallel configuration to increase current handling, but it is recommended to follow the guidelines provided in the Littelfuse application note AN10273, which provides detailed information on paralleling thyristors.
  • The recommended gate drive circuit for the IXTA08N100D2-TRL can be found in the Littelfuse application note AN9313, which provides a detailed circuit diagram and component selection guidelines for a typical gate drive circuit.
  • To handle the IXTA08N100D2-TRL's high dv/dt rating, it is recommended to use a snubber circuit or a dv/dt filter to reduce the voltage transient and ensure reliable operation. The Littelfuse application note AN10274 provides more information on dv/dt protection circuits.

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