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IXTA10P50P - LITTELFUSE

Description: Trans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK "

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IXTA10P50P - LITTELFUSE  - 3D model
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IXTA10P50P Details

  • Manufacturer Part Number:

    IXTA10P50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.25

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA10P50P Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for the IXTA10P50P can be found in the Littelfuse application note AN9313, which provides guidelines for surface mount assembly of thyristor devices.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Littelfuse application note AN9313. Additionally, use a solder with a melting point below 250°C to prevent damage to the device.
  • The IXTA10P50P has a high power dissipation capability, so proper thermal management is crucial. Ensure good heat sinking, use a thermal interface material, and follow the thermal design guidelines outlined in the datasheet to prevent overheating.
  • While the IXTA10P50P is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. Consult with Littelfuse or a qualified representative to determine if the device meets the necessary standards and certifications for such applications.
  • To protect the IXTA10P50P from EOS and ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement circuit protection devices such as TVS diodes or zener diodes to prevent voltage transients.

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IXTA10P50P Overview

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