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IXTA180N10T - LITTELFUSE

Description: MOSFET 180 Amps 100V 6.1 Rds

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IXTA180N10T - LITTELFUSE PCB footprint - Other - Other - TO-263 (IXTA)
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IXTA180N10T - LITTELFUSE  - 3D model - Other - TO-263 (IXTA)
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IXTA180N10T Details

  • Manufacturer Part Number:

    IXTA180N10T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.9

  • Additional Feature:

    AVALANCHE RATED, ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    162 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Pulsed Drain Current-Max (IDM):

    450 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA180N10T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA180N10T is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While IXTA180N10T is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 10-20 kHz switching frequencies. Using it at higher frequencies may lead to increased losses, reduced efficiency, and potential reliability issues.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of ≤ 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of ≤ 0.1°C/W. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow path.
  • The maximum allowed voltage transient for IXTA180N10T is ± 10% of the rated voltage (1800V) for a duration of ≤ 1ms. Exceeding this limit may cause device damage or failure.
  • Yes, IXTA180N10T can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are matched in terms of electrical characteristics, and the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the thermal management system should be designed to handle the increased power dissipation.

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