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IXTA1N100P - LITTELFUSE

Description: Trans MOSFET N-CH 1KV 1A 3-Pin(2+Tab) D2PAK

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IXTA1N100P Details

  • Manufacturer Part Number:

    IXTA1N100P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    1.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA1N100P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA1N100P is a standard SMD footprint with a pad size of 0.8mm x 0.8mm and a pitch of 1.27mm. It's recommended to follow the manufacturer's recommended land pattern to ensure proper soldering and thermal performance.
  • While IXTA1N100P has a high operating temperature range of -40°C to 150°C, it's essential to consider the derating of the device's characteristics at high temperatures. The device's surge current rating, for example, decreases at higher temperatures. It's recommended to consult the datasheet and application notes for specific guidance on using the device in high-temperature environments.
  • To select the correct TVS diode, consider the following factors: 1) voltage rating, 2) surge current rating, 3) response time, 4) clamping voltage, and 5) package type. IXTA1N100P is a 100V TVS diode with a surge current rating of 1A, making it suitable for protecting against voltage transients in low-voltage applications. Consult the datasheet and application notes for guidance on selecting the correct TVS diode for your specific application.
  • IXTA1N100P is designed for low-frequency applications, such as protecting against voltage transients in power supplies and DC lines. While it can be used in high-frequency applications, its performance may be affected by its parasitic capacitance and inductance. It's recommended to consult the datasheet and application notes for guidance on using the device in high-frequency applications.
  • To ensure the reliability of IXTA1N100P in your design, follow proper PCB design and layout guidelines, ensure proper soldering and assembly, and consider environmental factors such as temperature, humidity, and vibration. Additionally, consider implementing redundancy or fault-tolerant designs to mitigate the impact of device failure.

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IXTA1N100P Overview

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