Part Image

IXTA1N120P - LITTELFUSE

Description: Disc Mosfet N-CH Std-Polar TO-263D2 / TUBE

Download IXTA1N120P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXTA1N120P - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXTA1N120P Details

  • Manufacturer Part Number:

    IXTA1N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    20 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    1.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA1N120P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA1N120P is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
  • While IXTA1N120P is a fast-switching thyristor, it's not recommended for high-frequency switching applications above 10 kHz due to its limited dv/dt rating and potential for oscillation.
  • To ensure reliable operation of IXTA1N120P in high-temperature environments, make sure to derate the device's current and voltage ratings according to the datasheet, and provide adequate heat sinking and thermal management.
  • While IXTA1N120P may have similar specifications to other thyristors, it's not recommended to use it as a direct replacement without verifying the device's performance and compatibility in the specific application.
  • The recommended gate drive circuit for IXTA1N120P is a low-impedance, high-current driver with a gate resistance of 10 ohms or less, and a gate voltage of 10-15V.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXTA1N120P Overview

Use the download button to access the IXTA1N120P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTA1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXTA1N120P

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview