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IXTA1R6N100D2HV - LITTELFUSE

Description: N-Channel 1000 V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV

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Symbol
IXTA1R6N100D2HV - LITTELFUSE - PCB symbol
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PCB Footprints
IXTA1R6N100D2HV - LITTELFUSE PCB footprint - Other - Other - TO-263HV_2022
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3D Models
IXTA1R6N100D2HV - LITTELFUSE - 3D model - Other - TO-263HV_2022
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IXTA1R6N100D2HV Details

  • Manufacturer Part Number:

    IXTA1R6N100D2HV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    10 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA1R6N100D2HV Frequently Asked Questions (FAQs)

  • The recommended mounting torque for the IXTA1R6N100D2HV is 10-12 in-lbs (1.1-1.4 Nm) for the screw terminals and 15-18 in-lbs (1.7-2.0 Nm) for the nut and washer.
  • While the IXTA1R6N100D2HV is designed for high-voltage applications, it is not suitable for high-frequency applications above 1 kHz due to its internal construction and switching characteristics.
  • To ensure proper heat sinking, use a heat sink with a thermal resistance of 1°C/W or less, and apply a thin layer of thermal interface material (TIM) between the device and heat sink. Also, ensure good airflow around the heat sink.
  • The recommended gate drive voltage for the IXTA1R6N100D2HV is 10-15V, with a current limit of 100-200mA to ensure reliable triggering and minimize power losses.
  • Yes, the IXTA1R6N100D2HV can be used in parallel or series configurations to increase current handling or voltage rating, but careful consideration must be given to ensure proper current sharing and voltage balancing.

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IXTA1R6N100D2HV Overview

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