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IXTA3N120 - LITTELFUSE

Description: MOSFET 3 Amps 1200V 4.5 Rds

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IXTA3N120 Details

  • Manufacturer Part Number:

    IXTA3N120

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    4.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA3N120 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTA3N120 is a standard SOT-23 package with a 0.65mm pitch and a 2.5mm x 2.5mm body size. A minimum pad size of 1.5mm x 1.5mm is recommended for reliable soldering.
  • To ensure reliable operation of the IXTA3N120 in high-temperature environments, it is recommended to derate the device's power dissipation according to the thermal derating curve provided in the datasheet. Additionally, ensure good thermal conduction between the device and the PCB, and consider using a heat sink if necessary.
  • The maximum allowable voltage transient for the IXTA3N120 is 150V for a duration of 100ms, as specified in the datasheet. Exceeding this limit may damage the device.
  • While the IXTA3N120 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications up to 100kHz. However, the device's performance and reliability may be affected by high-frequency switching, and additional design considerations such as layout, decoupling, and filtering may be necessary.
  • The IXTA3N120 has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage to the device. Additionally, consider adding external ESD protection devices or circuits if the application requires it.

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IXTA3N120 Overview

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