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IXTA6N100D2 - LITTELFUSE

Description: MOSFET N-CH 1000V 6A D2PAK

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IXTA6N100D2 - LITTELFUSE  - 3D model
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IXTA6N100D2 Details

  • Manufacturer Part Number:

    IXTA6N100D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    41 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA6N100D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA6N100D2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While IXTA6N100D2 is a fast-switching thyristor, it's not recommended for high-frequency switching applications above 10kHz due to its relatively high switching losses and limited thermal performance.
  • To ensure reliable operation of IXTA6N100D2 in high-temperature environments, it's essential to provide adequate heat sinking, maintain a maximum junction temperature of 150°C, and follow the recommended derating curves for voltage and current.
  • A recommended gate drive circuit for IXTA6N100D2 includes a gate resistor (RG) of 1kΩ to 10kΩ, a gate capacitor (CG) of 10nF to 100nF, and a gate voltage (VG) of 10V to 15V, depending on the specific application requirements.
  • Yes, IXTA6N100D2 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are matched for voltage and current ratings, and that the gate drive circuits are properly synchronized to prevent uneven current sharing.

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IXTA6N100D2 Overview

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