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IXTA6N100D2HV - LITTELFUSE

Description: MOSFET MSFT N-CH DEPL MODE-D2

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IXTA6N100D2HV Details

  • Manufacturer Part Number:

    IXTA6N100D2HV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    41 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA6N100D2HV Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the IXTA6N100D2HV is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
  • Proper thermal management is crucial for the IXTA6N100D2HV. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and maintain a minimum distance between the device and other components to prevent thermal coupling. The datasheet provides thermal resistance values to help with thermal design.
  • The datasheet does not explicitly specify a maximum allowable voltage transient. However, as a general guideline, it's recommended to limit voltage transients to 10% of the device's rated voltage (1000V) to prevent damage or malfunction. Consult with Littelfuse Inc or a qualified engineer for specific guidance.
  • The IXTA6N100D2HV is designed for high-power, low-frequency applications. While it can be used in high-frequency switching applications, its performance may not be optimal due to its relatively high switching losses. Consult with Littelfuse Inc or a qualified engineer to determine the device's suitability for your specific application.
  • To protect the IXTA6N100D2HV from EOS, ensure that the device is operated within its specified voltage and current ratings. Use surge protection devices, such as metal-oxide varistors (MOVs) or transient voltage suppressors (TVSs), to absorb voltage transients. Additionally, implement proper circuit design and layout practices to minimize the risk of EOS.

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IXTA6N100D2HV Overview

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