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IXTA6N50D2 - LITTELFUSE

Description: MOSFET N-CH MOSFETS (D2) 500V 6A

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IXTA6N50D2 - LITTELFUSE  - 3D model
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IXTA6N50D2 Details

  • Manufacturer Part Number:

    IXTA6N50D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.25

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    64 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA6N50D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA6N50D2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal management and electrical performance.
  • While IXTA6N50D2 is a fast-switching IGBT, it's not optimized for high-frequency switching applications above 100 kHz. For high-frequency applications, it's recommended to use a dedicated high-frequency IGBT or MOSFET device. However, if you still want to use IXTA6N50D2, ensure that you carefully evaluate the device's switching losses, thermal performance, and electromagnetic interference (EMI) characteristics.
  • To protect IXTA6N50D2 from overvoltage and overcurrent, it's recommended to use a combination of voltage clamping devices (e.g., TVS diodes) and current limiting devices (e.g., fuses or current sense resistors). Additionally, ensure that your circuit design includes proper overvoltage and overcurrent detection mechanisms, such as voltage monitors and current sensors, to trigger protective actions (e.g., shutdown or fault indication) in case of an overvoltage or overcurrent event.
  • While it's technically possible to parallel multiple IXTA6N50D2 devices, it's not recommended due to the potential for current imbalance and thermal runaway. Instead, consider using a single device with a higher current rating or a different device specifically designed for parallel operation. If you still want to parallel IXTA6N50D2 devices, ensure that you carefully evaluate the circuit design, thermal management, and current sharing mechanisms to prevent uneven current distribution and thermal hotspots.
  • The recommended gate drive voltage for IXTA6N50D2 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and circuit design. It's recommended to consult the datasheet and application notes for more information on gate drive requirements and optimization techniques.

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IXTA6N50D2 Overview

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