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- Part Number IXTA75N10P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - IXTA75N10P-1
- Released Date Apr 22, 2020
- Last Modified Date Jun 20, 2024 10:26 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXTA75N10P Details
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Manufacturer Part Number:
IXTA75N10P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
5.85
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
1000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
IXTA75N10P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXTA75N10P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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While IXTA75N10P is a power MOSFET, it is not optimized for high-frequency switching applications. It has a relatively high gate charge and output capacitance, which may lead to increased switching losses and EMI. For high-frequency switching, consider using a MOSFET specifically designed for high-frequency applications.
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To ensure reliable operation of IXTA75N10P in a high-temperature environment, make sure to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
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Yes, you can parallel multiple IXTA75N10P devices to increase current handling, but it's essential to ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents. Additionally, consider the increased power dissipation and thermal management requirements.
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The recommended gate drive voltage for IXTA75N10P is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance and improve switching performance, but it may also increase the gate charge and power dissipation.
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IXTA75N10P Overview
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