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IXTH12N100L - LITTELFUSE

Description: IXYS IXTH12N100L N-channel MOSFET Transistor, 12 A, 1000 V, 3-Pin TO-247

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PCB Footprints
IXTH12N100L - LITTELFUSE PCB footprint - Other - Other - IXTH12N100L-2
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IXTH12N100L - LITTELFUSE  - 3D model - Other - IXTH12N100L-2
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IXTH12N100L Details

  • Manufacturer Part Number:

    IXTH12N100L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    400 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH12N100L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH12N100L is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXTH12N100L is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
  • The maximum allowed case temperature for the IXTH12N100L is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to ensure the device's lifespan.
  • Yes, you can parallel multiple IXTH12N100L devices to increase the current rating, but it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.

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IXTH12N100L Overview

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