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IXTH3N150 - LITTELFUSE

Description: Trans MOSFET N-CH 1.5KV 3A 3-Pin(3+Tab) TO-247

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PCB Footprints
IXTH3N150 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXTH)_2023
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3D Models
IXTH3N150 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXTH)_2023
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IXTH3N150 Details

  • Manufacturer Part Number:

    IXTH3N150

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1500 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    7.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXTH3N150 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH3N150 is a standard TO-220 package with a minimum pad size of 0.2 inches x 0.2 inches and a thermal pad size of 0.4 inches x 0.4 inches.
  • While the IXTH3N150 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and thermal management. However, it's essential to consult with Littelfuse's application engineers to ensure the device meets the specific requirements of your high-frequency application.
  • To ensure the reliability of the IXTH3N150 in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range of -40°C to 150°C.
  • Yes, the IXTH3N150 can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients. It's recommended to consult with Littelfuse's application engineers to ensure proper parallel operation.
  • The recommended gate drive voltage for the IXTH3N150 is between 10 V and 15 V, with a maximum gate drive current of 1 A. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.

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