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IXTH40N50L2 - LITTELFUSE

Description: Trans MOSFET N-CH 500V 40A 3-Pin(3+Tab) TO-247AD

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IXTH40N50L2 Details

  • Manufacturer Part Number:

    IXTH40N50L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTH40N50L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH40N50L2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While the IXTH40N50L2 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz. Using it at higher frequencies may lead to increased losses, reduced efficiency, and potential reliability issues.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of ≤ 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow path.
  • The IXTH40N50L2 can withstand voltage transients up to 600 V for a duration of ≤ 10 μs. However, it's recommended to limit the voltage transients to ≤ 500 V to ensure reliable operation and prevent potential damage to the device.
  • Yes, the IXTH40N50L2 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and potential damage to the devices.

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IXTH40N50L2 Overview

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