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IXTH4N150 - LITTELFUSE

Description: DiscMosfet N-CH Std-HiVoltage TO-247AD

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IXTH4N150 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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3D Models
IXTH4N150 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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IXTH4N150 Details

  • Manufacturer Part Number:

    IXTH4N150

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    350 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1500 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXTH4N150 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH4N150 is a standard TO-220 package with a minimum pad size of 0.2 inches (5 mm) x 0.15 inches (3.8 mm) and a thermal pad size of 0.15 inches (3.8 mm) x 0.15 inches (3.8 mm).
  • To ensure reliable thermal performance, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage transient for the IXTH4N150 is 400 V for a duration of 10 ms, as specified in the datasheet. However, it's recommended to limit voltage transients to 300 V or less to ensure reliable operation.
  • While the IXTH4N150 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may be affected by high-frequency switching, and additional design considerations may be necessary.
  • To protect the IXTH4N150 from electrical overstress (EOS), use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) in parallel with the device, and ensure that the TVS or MOV is rated for the maximum expected voltage transient.

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