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IXTH500N04T2 - LITTELFUSE

Description: MOSFET TRENCHT2 PWR MOSFET 40V 500A

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Symbol
IXTH500N04T2 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTH500N04T2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247+1
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3D Models
IXTH500N04T2 - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247+1
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IXTH500N04T2 Details

  • Manufacturer Part Number:

    IXTH500N04T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    500 A

  • Drain-source On Resistance-Max:

    0.0016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    970 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1000 W

  • Pulsed Drain Current-Max (IDM):

    1250 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH500N04T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH500N04T2 is a standard TO-247 package with a minimum pad size of 5.5mm x 3.5mm and a thermal pad size of 3.5mm x 3.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 1°C/W and a surface area of at least 10cm². The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The maximum allowed case temperature for the IXTH500N04T2 is 150°C. Operating the device above this temperature can reduce its reliability and lifespan. It's recommended to design the thermal management system to keep the case temperature below 125°C to ensure optimal performance and reliability.
  • Yes, the IXTH500N04T2 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent current imbalance and oscillations. Additionally, the thermal management system should be designed to handle the increased power dissipation.
  • The recommended gate drive voltage for the IXTH500N04T2 is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress and reduce the device's reliability. It's recommended to follow the gate drive voltage guidelines provided in the datasheet or application notes.

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IXTH500N04T2 Overview

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