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IXTH60N20L2 - LITTELFUSE

Description: Trans MOSFET N-CH 200V 60A 3-Pin(3+Tab) TO-247

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PCB Footprints
IXTH60N20L2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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3D Models
IXTH60N20L2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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IXTH60N20L2 Details

  • Manufacturer Part Number:

    IXTH60N20L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    255 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTH60N20L2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXTH60N20L2 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated at extreme temperatures for extended periods.
  • To ensure proper cooling, follow the thermal management guidelines provided in the datasheet. Ensure good airflow around the device, and consider using a heat sink if necessary. The thermal resistance (RθJA) of the device is 40°C/W, which can help you estimate the required heat sink size.
  • The recommended gate drive voltage for the IXTH60N20L2 is between 10V and 15V. However, the datasheet specifies a maximum gate-source voltage (VGS) of ±20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the IXTH60N20L2 is suitable for high-frequency switching applications. The device has a low gate charge (Qg) of 120nC and a fast switching time (trr) of 100ns, making it suitable for high-frequency switching up to 100kHz. However, ensure proper thermal management and consider the device's power losses at high frequencies.
  • To protect the IXTH60N20L2 from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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