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IXTK200N10L2 - LITTELFUSE

Description: MOSFET L2 Linear Power MOSFET

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PCB Footprints
IXTK200N10L2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXTK200N10L2*1
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3D Models
IXTK200N10L2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXTK200N10L2*1
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IXTK200N10L2 Details

  • Manufacturer Part Number:

    IXTK200N10L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    610 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1040 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTK200N10L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTK200N10L2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device. The heat sink should have a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device and avoid blocking the airflow with other components.
  • The maximum allowed case temperature for the IXTK200N10L2 is 150°C. Exceeding this temperature can lead to device failure or reduced lifespan.
  • Yes, the IXTK200N10L2 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the IXTK200N10L2 from electrical overstress, ensure that the device is operated within its specified voltage and current ratings. Additionally, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage and current surges.

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IXTK200N10L2 Overview

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