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IXTK200N10P - LITTELFUSE

Description: IXYS SEMICONDUCTOR - IXTK200N10P - Power MOSFET, PolarFET, N Channel, 100 V, 200 A, 0.0075 ohm, TO-264, Through Hole

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PCB Footprints
IXTK200N10P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (IXFK)
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3D Models
IXTK200N10P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 (IXFK)
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IXTK200N10P Details

  • Manufacturer Part Number:

    IXTK200N10P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTK200N10P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTK200N10P is a TO-220 package with a minimum pad size of 70mm² and a maximum pad size of 100mm², with a 1.5mm lead spacing.
  • While IXTK200N10P is suitable for high-frequency switching, it's essential to consider the device's switching losses, thermal performance, and EMI characteristics. Consult with Littelfuse's application notes and technical support for specific guidance.
  • To ensure reliable operation, follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and maintaining a safe operating temperature below the maximum junction temperature (Tj) of 150°C.
  • The recommended gate drive voltage for IXTK200N10P is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, consult the datasheet and application notes for specific gate drive requirements.
  • Yes, you can parallel multiple IXTK200N10P devices, but it's crucial to ensure proper current sharing, thermal management, and gate drive synchronization to avoid uneven current distribution and potential reliability issues.

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IXTK200N10P Overview

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