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IXTK82N25P - LITTELFUSE

Description: MOSFET, N-CH, 250V, 82A, TO-264

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PCB Footprints
IXTK82N25P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (IXTK)-ren1
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3D Models
IXTK82N25P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 (IXTK)-ren1
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IXTK82N25P Details

  • Manufacturer Part Number:

    IXTK82N25P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTK82N25P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTK82N25P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTK82N25P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time.
  • To ensure reliable operation of IXTK82N25P in a high-temperature environment, it is recommended to derate the device's power rating according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and cooling.
  • Yes, IXTK82N25P is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.
  • The recommended gate drive voltage for IXTK82N25P is between 10V and 15V, with a maximum gate-source voltage of 20V.

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IXTK82N25P Overview

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