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IXTN600N04T2 - LITTELFUSE

Description: Trans MOSFET N-CH 40V 600A 4-Pin SOT-227B

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IXTN600N04T2 - LITTELFUSE  - 3D model
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IXTN600N04T2 Details

  • Manufacturer Part Number:

    IXTN600N04T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.1

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    600 A

  • Drain-source On Resistance-Max:

    0.0013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1470 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    940 W

  • Pulsed Drain Current-Max (IDM):

    1800 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Nickel (Ni)

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTN600N04T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTN600N04T2 is a TO-247-3L package with a minimum pad size of 12.7mm x 12.7mm and a thermal pad size of 6.5mm x 6.5mm.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating curves provided in the datasheet, and to ensure proper thermal management, such as using a heat sink and thermal interface material.
  • The maximum allowed voltage transient for IXTN600N04T2 is 600V, but it is recommended to limit the voltage transient to 450V to ensure reliable operation.
  • Yes, IXTN600N04T2 can be used in parallel to increase current handling, but it is recommended to ensure that the devices are matched in terms of electrical characteristics and thermal performance to avoid uneven current sharing.
  • The recommended gate drive voltage for IXTN600N04T2 is 10V to 15V, but it can be adjusted based on the specific application requirements and the desired switching performance.

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IXTN600N04T2 Overview

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