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IXTN660N04T4 - LITTELFUSE

Description: Discrete Semiconductor Modules 40V/660A TrenchT4 Power MOSFET

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IXTN660N04T4 - LITTELFUSE  - 3D model
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IXTN660N04T4 Details

  • Manufacturer Part Number:

    IXTN660N04T4

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    660 A

  • Drain-source On Resistance-Max:

    0.00085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3500 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1040 W

  • Pulsed Drain Current-Max (IDM):

    1800 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTN660N04T4 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTN660N04T4 is a standard TO-247 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, IXTN660N04T4 is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
  • To ensure reliable operation of IXTN660N04T4 in high-temperature environments, it is recommended to derate the device's power rating according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and cooling.
  • Yes, IXTN660N04T4 is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.
  • The recommended gate drive voltage for IXTN660N04T4 is 10-15V, with a maximum gate-source voltage of 20V.

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IXTN660N04T4 Overview

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