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IXTP02N120P - LITTELFUSE

Description: MOSFET N-CH 1200V 0.2A TO-220

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PCB Footprints
IXTP02N120P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB-ren3
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3D Models
IXTP02N120P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220AB-ren3
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IXTP02N120P Details

  • Manufacturer Part Number:

    IXTP02N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    0.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTP02N120P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTP02N120P is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • Yes, IXTP02N120P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
  • The recommended gate drive voltage for IXTP02N120P is between 10V and 15V, with a maximum gate-source voltage of ±20V to ensure reliable switching and minimize the risk of damage.
  • Yes, IXTP02N120P can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.

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