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IXTP08N50D2 - LITTELFUSE

Description: Trans MOSFET N-CH 500V 0.8A 3-Pin(3+Tab) TO-220AB

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PCB Footprints
IXTP08N50D2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXTP08N50D2*
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3D Models
IXTP08N50D2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXTP08N50D2*
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IXTP08N50D2 Details

  • Manufacturer Part Number:

    IXTP08N50D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    4.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTP08N50D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTP08N50D2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While the IXTP08N50D2 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The IXTP08N50D2 can withstand voltage transients up to 600 V for a duration of 10 μs. However, it's recommended to limit voltage transients to 550 V or less to ensure reliable operation and prevent damage to the device.
  • Yes, the IXTP08N50D2 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive and control circuits are designed to handle the increased current and voltage stresses.

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IXTP08N50D2 Overview

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