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IXTP36N30P - LITTELFUSE

Description: PolarHTTM Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, 300V, 36A, 110 mΩ

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PCB Footprints
IXTP36N30P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (IXTP)
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3D Models
IXTP36N30P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220 (IXTP)
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IXTP36N30P Details

  • Manufacturer Part Number:

    IXTP36N30P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.95

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTP36N30P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTP36N30P is a TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • Yes, IXTP36N30P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below 150°C.
  • The recommended gate drive voltage for IXTP36N30P is between 10V and 15V, with a maximum gate-source voltage of ±20V to ensure reliable switching and prevent damage to the device.
  • Yes, you can parallel multiple IXTP36N30P devices to increase current handling, but it's essential to ensure that each device has its own gate drive circuitry and that the devices are properly matched to prevent current imbalance and thermal runaway.

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IXTP36N30P Overview

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