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IXTP3N120 - LITTELFUSE

Description: IXYS SEMICONDUCTOR - IXTP3N120 - Power MOSFET, N Channel, 1.2 kV, 3 A, 4.5 ohm, TO-220, Through Hole

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PCB Footprints
IXTP3N120 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXTP3N120
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3D Models
IXTP3N120 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXTP3N120
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IXTP3N120 Details

  • Manufacturer Part Number:

    IXTP3N120

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    4.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTP3N120 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTP3N120 is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern for optimal thermal performance.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device with a thermal interface material (TIM) and secure it with a screw or clip. The heat sink should have a minimum size of 1 inch x 1 inch and a thermal resistance of 10°C/W or lower.
  • The maximum allowed case temperature for the IXTP3N120 is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • Yes, the IXTP3N120 is suitable for high-reliability applications. It's manufactured using a high-reliability process and is screened to ensure it meets the required standards. However, it's recommended to follow the manufacturer's guidelines for high-reliability applications.
  • To protect the IXTP3N120 from ESD, it's recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and storage procedures. The device also has built-in ESD protection, but it's not a substitute for proper handling and storage.

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IXTP3N120 Overview

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