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IXTP6N50D2 - LITTELFUSE

Description: Trans MOSFET N-CH 500V 3-Pin(3+Tab) TO-220AB

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PCB Footprints
IXTP6N50D2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (IXTP)-ren1
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3D Models
IXTP6N50D2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220AB (IXTP)-ren1
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IXTP6N50D2 Details

  • Manufacturer Part Number:

    IXTP6N50D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    64 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTP6N50D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTP6N50D2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTP6N50D2 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below 150°C.
  • The recommended gate drive voltage for IXTP6N50D2 is between 10V and 15V, with a gate current of 1A to 2A to ensure reliable switching.
  • Yes, IXTP6N50D2 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.

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IXTP6N50D2 Overview

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