- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTQ170N10P
- Part Number IXTQ170N10P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-3P (IXTQ)
- Released Date Jan 17, 2020
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXTQ170N10P Details
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Manufacturer Part Number:
IXTQ170N10P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
5.3
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
2000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
IXTQ170N10P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IXTQ170N10P is a TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
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To ensure reliable operation of the IXTQ170N10P in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The maximum allowed voltage transient for the IXTQ170N10P is 10% above the maximum rated voltage, which is 1000V for this device. However, it is recommended to follow the guidelines provided in the datasheet for voltage transient protection.
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Yes, the IXTQ170N10P can be used in a parallel configuration to increase current handling, but it is recommended to follow proper design and layout guidelines to ensure equal current sharing and to minimize thermal and electrical stresses.
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The recommended gate drive voltage for the IXTQ170N10P is 10V to 15V, with a maximum gate drive current of 5A. However, the optimal gate drive voltage and current may vary depending on the specific application and requirements.
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IXTQ170N10P Overview
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