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IXTQ82N25P - LITTELFUSE

Description: MOSFET 82 Amps 250V 0.035 Rds

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Symbol
IXTQ82N25P - LITTELFUSE - PCB symbol
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PCB Footprints
IXTQ82N25P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P Outline
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3D Models
IXTQ82N25P - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-3P Outline
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IXTQ82N25P Details

  • Manufacturer Part Number:

    IXTQ82N25P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTQ82N25P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTQ82N25P is a TO-220 package with a minimum pad size of 0.2 inches (5 mm) x 0.15 inches (3.8 mm) and a thermal pad size of 0.2 inches (5 mm) x 0.2 inches (5 mm).
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder with a melting point of 180°C to 220°C. Also, ensure the PCB is clean and free of oxidation.
  • The maximum allowed case temperature for the IXTQ82N25P is 150°C. Exceeding this temperature may lead to reduced reliability and lifespan.
  • While the IXTQ82N25P is designed to operate in a wide range of temperatures, it's not recommended for use in high-humidity environments (> 80% RH) without proper protection, such as conformal coating or hermetic sealing.
  • To calculate the power dissipation, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

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IXTQ82N25P Overview

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