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IXTT16N10D2 - LITTELFUSE

Description: Depletion Mode MOSFET N-Channel

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PCB Footprints
IXTT16N10D2 - LITTELFUSE PCB footprint - Other - Other - IXTT (TO-268)
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3D Models
IXTT16N10D2 - LITTELFUSE  - 3D model - Other - IXTT (TO-268)
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IXTT16N10D2 Details

  • Manufacturer Part Number:

    IXTT16N10D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    940 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    830 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    410 ns

  • Turn-on Time-Max (ton):

    88 ns

IXTT16N10D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTT16N10D2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of 10°C/W or lower is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of 1 W/m-K or higher should be used to fill the gap between the device and the heat sink.
  • The maximum allowed voltage transient for the IXTT16N10D2 is 400V for a duration of 100ms or less. Exceeding this limit may damage the device.
  • Yes, the IXTT16N10D2 is suitable for high-reliability applications. It is manufactured using a high-reliability process and is screened to ensure a low defect rate. However, it is recommended to follow the manufacturer's recommended derating guidelines to ensure the device operates within its specified limits.
  • To protect the IXTT16N10D2 from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper grounding procedures during assembly and testing.

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IXTT16N10D2 Overview

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