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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTT1N300P3HV
- Part Number IXTT1N300P3HV
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Last Modified Date Oct 9, 2024 2:53 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXTT1N300P3HV Details
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Manufacturer Part Number:
IXTT1N300P3HV
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
3000 V
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Drain Current-Max (ID):
1 A
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Drain-source On Resistance-Max:
50 Ω
IXTT1N300P3HV Frequently Asked Questions (FAQs)
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The recommended mounting torque for the IXTT1N300P3HV is 10-15 in-lbs (1.1-1.7 Nm) for the screw terminals and 10-12 ft-lbs (13.6-16.3 Nm) for the nut and washer.
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While the IXTT1N300P3HV is designed for high-voltage applications, it is not optimized for high-frequency switching. The device has a relatively high turn-on time (tq) and turn-off time (tr) compared to other thyristors, which may limit its performance in high-frequency applications.
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To ensure reliable operation of the IXTT1N300P3HV in a high-temperature environment, it is essential to provide adequate heat sinking and thermal management. The device has a maximum junction temperature (Tj) of 150°C, and exceeding this temperature can lead to reduced performance and reliability.
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The IXTT1N300P3HV has a relatively low di/dt rating of 100 A/μs, which may not be suitable for circuits with high di/dt. Exceeding this rating can lead to device failure or reduced performance.
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The recommended gate drive circuit for the IXTT1N300P3HV typically includes a gate resistor (Rg) in the range of 10-100 ohms, a gate capacitor (Cg) in the range of 10-100 nF, and a gate drive voltage (Vg) of 10-20 V. The exact values depend on the specific application and circuit requirements.
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IXTT1N300P3HV Overview
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