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- Stock & Prices $ Price & Stock for IXTT20P50P
- Part Number IXTT20P50P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (P-Channel)
- Package Category Other
- Footprint Name Other - IXTT (TO-268)
- Released Date Aug 17, 2019
- Last Modified Date Dec 18, 2024 11:43 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXTT20P50P Details
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Manufacturer Part Number:
IXTT20P50P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
2500 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
500 V
IXTT20P50P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXTT20P50P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
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While IXTT20P50P is a high-power thyristor, it's not recommended for high-frequency switching applications above 1 kHz. The device is optimized for high-voltage and high-current applications, but its switching speed is limited. For high-frequency applications, consider using a thyristor specifically designed for high-frequency switching, such as the Littelfuse SIDACtor series.
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To ensure reliable operation of IXTT20P50P in a high-temperature environment, it's essential to provide adequate heat sinking and thermal management. The device has a maximum junction temperature of 150°C, so ensure that the PCB design and thermal interface materials can keep the junction temperature below this limit. Additionally, consider derating the device's current and voltage ratings according to the ambient temperature.
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Yes, IXTT20P50P can be used in a parallel configuration to increase current handling, but it's crucial to ensure that the devices are properly matched and synchronized to prevent uneven current sharing. Additionally, the PCB design should be optimized to minimize inductance and resistance between the devices. It's recommended to consult with a Littelfuse application engineer or a qualified design expert to ensure a reliable parallel configuration.
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The recommended gate drive circuit for IXTT20P50P depends on the specific application requirements, but a general-purpose gate drive circuit can be designed using a gate driver IC, such as the Littelfuse SG3525, and a few external components. The gate drive circuit should provide a minimum gate current of 100 mA and a gate voltage of 10-15V to ensure reliable triggering of the thyristor.
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IXTT20P50P Overview
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