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IXTU01N100 - LITTELFUSE

Description: Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(3+Tab) TO-251AA

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IXTU01N100 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXTU01N100*
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3D Models
IXTU01N100 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXTU01N100*
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IXTU01N100 Details

  • Manufacturer Part Number:

    IXTU01N100

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    0.1 A

  • Drain-source On Resistance-Max:

    80 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    0.4 A

  • Surface Mount:

    NO

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IXTU01N100 Overview

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Part Image IXTU01N100 IXYS Corporation

Power Field-Effect Transistor, 0.1A I(D), 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA