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IXTX46N50L - LITTELFUSE

Description: Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) PLUS 247

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PCB Footprints
IXTX46N50L - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PLUS247
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3D Models
IXTX46N50L - LITTELFUSE  - 3D model - Transistor Outline, Vertical - PLUS247
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IXTX46N50L Details

  • Manufacturer Part Number:

    IXTX46N50L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    170 pF

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    700 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTX46N50L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTX46N50L is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While IXTX46N50L is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies. Using it at higher frequencies may lead to increased losses, reduced efficiency, and potential reliability issues.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of ≤ 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of ≤ 0.1°C/W. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow path.
  • The maximum allowed voltage transient for IXTX46N50L is 600V. Exceeding this voltage may cause damage to the device or affect its reliability. It's essential to ensure that the device is protected from voltage transients using suitable snubber circuits or voltage clamping devices.
  • Yes, IXTX46N50L can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and the gate drive circuits are designed to minimize current imbalance and oscillations between the parallel devices.

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IXTX46N50L Overview

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