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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTY08N100P
- Part Number IXTY08N100P
- Manufacturer LITTELFUSE
- Last Modified Date Aug 2, 2021 10:22 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXTY08N100P Details
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Manufacturer Part Number:
IXTY08N100P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
80 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
1000 V
IXTY08N100P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXTY08N100P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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While IXTY08N100P is a fast-switching thyristor, it's not recommended for high-frequency switching applications above 1 kHz due to its limited dv/dt rating and potential for oscillation.
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To ensure reliable operation of IXTY08N100P in high-temperature environments, it's essential to provide adequate heat sinking, maintain a safe operating junction temperature (Tj) below 125°C, and follow the recommended derating curves for voltage and current.
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A recommended gate drive circuit for IXTY08N100P includes a gate resistor (Rg) of 1 kΩ to 10 kΩ, a gate capacitor (Cg) of 10 nF to 100 nF, and a gate voltage (Vg) of 10 V to 15 V, depending on the specific application requirements.
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Yes, IXTY08N100P can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are matched for voltage and current ratings, and that the gate drive circuit is designed to accommodate the increased current requirements.
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IXTY08N100P Overview
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