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JAN2N3439 - Microsemi Corporation

Description: Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag

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JAN2N3439 - Microsemi Corporation PCB footprint - Other - Other - 3-Pin TO-39
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JAN2N3439 Details

  • Manufacturer Part Number:

    JAN2N3439

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    TO-39, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-205AD

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    5 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-19500

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    15 MHz

  • Turn-off Time-Max (toff):

    10000 ns

  • Turn-on Time-Max (ton):

    1000 ns

JAN2N3439 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the JAN2N3439 is -55°C to 125°C.
  • To ensure reliability, follow proper handling and storage procedures, use a clean and controlled environment, and adhere to the recommended operating conditions and derating guidelines.
  • The JAN2N3439 is designed to meet the radiation hardness assurance (RHA) levels of MIL-PRF-19500, with a total dose radiation tolerance of 100 krad (Si).
  • Yes, the JAN2N3439 can be used in non-radiation environments, but it is still subject to the same quality and reliability standards as radiation-hardened devices.
  • The JAN2N3439 is a radiation-hardened version of the 2N3439, with additional testing and screening to ensure its reliability in high-reliability applications.

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JAN2N3439 Overview

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Part Image 2N3439E3 Microchip Technology Inc

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin

Part Image JANTX2N3439L Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin

Part Image 2N3439 International Devices Inc

Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5

Part Image 2N3439 Electronic Transistors Corp

Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5

Part Image JAN2N3439 Motorola Semiconductor Products

Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD

For a full list of alternate parts for JAN2N3439, check out Findchips.com