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KSB1151YS - onsemi

Description: High Power Dissipation: PC= 1.3 W (Ta=25°C); Large Collector Current; Low Collector-Emitter Saturation Voltage; Complement to KSD1691

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KSB1151YS - onsemi  - 3D model
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KSB1151YS Details

  • Manufacturer Part Number:

    KSB1151YS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Manufacturer Package Code:

    340AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

KSB1151YS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Monitor the device's current, voltage, and temperature. Implement overcurrent protection (OCP), overvoltage protection (OVP), and thermal shutdown (TSD) mechanisms to prevent damage.
  • Use a low-dropout linear regulator (LDO) or a switching regulator with a low minimum input voltage. Ensure the input capacitor is sufficient to handle the device's current requirements.
  • Use a shielded enclosure, and ensure proper PCB layout and grounding techniques. Implement EMI filters and shielding on the input and output lines. Follow the onsemi application note for EMI reduction.

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KSB1151YS Overview

Use the download button to access the KSB1151YS 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image KTB1151Y KEC

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSB1151YSTU onsemi

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSB1151YSTU_NL Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSB1151YSTSTU_NL Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image KSB1151G Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

For a full list of alternate parts for KSB1151YS, check out Findchips.com