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KSB1151YSTU - onsemi

Description: High Power Dissipation: PC= 1.3 W (Ta=25°C); Large Collector Current; Low Collector-Emitter Saturation Voltage; Complement to KSD1691

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KSB1151YSTU - onsemi - PCB symbol
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PCB Footprints
KSB1151YSTU - onsemi PCB footprint - Other - Other - TO-126_2024-5
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KSB1151YSTU - onsemi - 3D model - Other - TO-126_2024-5
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KSB1151YSTU Details

  • Manufacturer Part Number:

    KSB1151YSTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Manufacturer Package Code:

    340AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

KSB1151YSTU Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to ensure efficient heat dissipation.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots. Monitor the device's junction temperature to prevent overheating.
  • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and implement proper grounding and decoupling techniques. Ensure the PCB layout minimizes radiation and susceptibility to external interference.
  • Use a low-dropout linear regulator or a high-efficiency switching regulator to minimize voltage drops. Ensure the input voltage is within the recommended range, and optimize the PCB layout for minimal voltage drops.
  • Use a high-impedance probe or a differential probe to measure voltage and current. Ensure the measurement setup is properly calibrated and isolated from noise sources. Use a signal generator and an oscilloscope to characterize the device's frequency response.

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KSB1151YSTU Overview

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KSB1151YSTU Alternates

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Image Part Number Model
Part Image KTB1151Y KEC

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image KSB1151YS onsemi

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image KSB1151YSTU_NL Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image KSB1151YSTSTU_NL Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image KSB1151G Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
For a full list of alternate parts for KSB1151YSTU, check out Findchips.com