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MJ14002G - onsemi

Description: High Current Capability - IC Continuous = 60 Amperes; DC Current Gain - hFE = 15-100 @ IC = 50 Adc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc; Pb-Free Packages are Available

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MJ14002G Overview

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MJ14002G Alternates

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Image	Part Number	Model
	MJ14002R1 TT Electronics Power and Hybrid / Semelab Limited Power Bipolar Transistor, 70A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	MJ14002.MOD TT Electronics Power and Hybrid / Semelab Limited Power Bipolar Transistor, 70A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	MJ14002.MODR1 TT Electronics Resistors Power Bipolar Transistor, 70A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	MJ14002 TT Electronics Resistors Power Bipolar Transistor, 70A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	MJ14002 onsemi Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
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