Description:High DC Current Gain - hFE = 25-100 @ IC = 7.5 A; Complement to the PNP MJ4502; Excellent Safe Operating Area; Pb-Free Package is Available
The maximum SOA for the MJ802G is typically defined by the voltage and current ratings. However, it's essential to consult the application notes and thermal derating curves to ensure safe operation.
To ensure linear operation, the MJ802G should be biased in the active region, typically between 1-5V on the base with respect to the emitter. The collector-emitter voltage should be around 10-20V, and the collector current should be limited to the recommended maximum.
A heatsink with a thermal resistance of 1-2°C/W is recommended for the MJ802G. The heatsink should be designed to provide good thermal contact with the transistor, and thermal interface material (TIM) can be used to reduce thermal resistance.
While the MJ802G is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the transistor's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching.
To protect the MJ802G from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in anti-static packaging. Additionally, consider adding ESD protection circuits in the application design.
Trust Checks
No trust score is available for this model.
Trust Score Unavailable
Sponsored
MJ802G Overview
Use the download button to access the MJ802G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MJ802,
or try a keyword search, such as Power Bipolar Transistors
