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MJD122TF - onsemi

Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor

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MJD122TF - onsemi  - 3D model
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MJD122TF Details

  • Manufacturer Part Number:

    MJD122TF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AK

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

MJD122TF Frequently Asked Questions (FAQs)

  • The MJD122TF can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • The MJD122TF requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and the bias current is within the recommended range for optimal performance.
  • The maximum power dissipation for the MJD122TF is 1.5W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range to prevent overheating.
  • Yes, the MJD122TF can be used in switching applications, but ensure the switching frequency is within the recommended range (up to 100 kHz) and the device is properly biased and heat-sinked.
  • Handle the MJD122TF with care, and ensure all equipment and personnel are properly grounded. Use ESD-protective packaging and follow proper ESD-handling procedures to prevent damage.

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MJD122TF Overview

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Part Image MJD122TF Fairchild Semiconductor Corporation

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Part Image MJD122T4 Motorola Semiconductor Products

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Part Image MJD122-TP-HF Micro Commercial Components

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Part Image KSH122-TF Samsung Semiconductor

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For a full list of alternate parts for MJD122TF, check out Findchips.com