Part Image

MJD31C - onsemi

Description: --

Download MJD31C Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
MJD31C - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

MJD31C Details

  • Manufacturer Part Number:

    MJD31C

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    PLASTIC, CASE 369C, DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    140 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

MJD31C Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MJD31C is a standard SOT223 package with a minimum pad size of 1.5 mm x 1.5 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, keep the junction temperature below 150°C, and follow the recommended derating curves for power dissipation.
  • The maximum safe operating area (SOA) for the MJD31C is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the onsemi application note AND8193/D for calculating the SOA.
  • While the MJD31C can be used as a switch, it's not recommended for high-frequency applications (>100 kHz) due to its relatively high capacitance and inductance. A more suitable device, such as a MOSFET or IGBT, may be required for high-frequency switching applications.
  • To protect the MJD31C from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider adding ESD protection devices, such as TVS diodes or ESD suppressors, in the circuit design.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

MJD31C Overview

Use the download button to access the MJD31C 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MJD31, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJD31C

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

MJD31C Alternates

Showing results

Image Part Number Model
Part Image MJD31CT4 onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image KSH31C Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD31C-TP-HF Micro Commercial Components

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD31CRL onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD31C Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD31C, check out Findchips.com