Part Image

MJD32CT4G - onsemi

Description: Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Download MJD32CT4G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
MJD32CT4G - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

MJD32CT4G Details

  • Manufacturer Part Number:

    MJD32CT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

MJD32CT4G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MJD32CT4G is 10V to 30V, with a maximum voltage rating of 40V.
  • To ensure proper biasing, connect the base of the transistor to a voltage divider network that sets the base voltage to around 2.5V to 3.5V, and ensure the collector-emitter voltage is within the recommended range.
  • The maximum current rating for the MJD32CT4G is 3A, with a peak current rating of 6A.
  • To handle thermal management, ensure good heat sinking, use a thermal interface material, and consider using a heat sink with a thermal resistance of 1°C/W or lower.
  • The storage temperature range for the MJD32CT4G is -55°C to 150°C.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

MJD32CT4G Overview

Use the download button to access the MJD32CT4G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MJD32, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJD32CT4G

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

MJD32CT4G Alternates

Showing results

Image Part Number Model
Part Image MJD32C-TP Micro Commercial Components

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

Part Image MJD32CRL onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD32CTR13 Central Semiconductor Corp

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD32C STMicroelectronics

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD32C onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD32CT4G, check out Findchips.com