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MJD350G - onsemi

Description: Obsolete - 0.5 A, 300 V High Voltage PNP Bipolar Power Transistor

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MJD350G - onsemi PCB footprint - Other - Other - DPAK(SINGLE GAUGE)CASE 369C ISSUE G
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MJD350G Details

  • Manufacturer Part Number:

    MJD350G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJD350G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD350G is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum voltage rating is 350V and the maximum current rating is 10A. However, it's essential to consult the datasheet and application notes for specific SOA boundaries and derating guidelines.
  • Proper thermal management is crucial for the MJD350G. Ensure good thermal contact between the device and a suitable heat sink. Use a thermal interface material (TIM) to fill any gaps. Follow the recommended mounting and thermal design guidelines in the datasheet and application notes. Additionally, consider the device's thermal resistance (RθJA) and maximum junction temperature (Tj) ratings.
  • The recommended gate drive circuits for the MJD350G typically involve a gate driver IC, a bootstrap capacitor, and a resistive divider network. The specific circuit configuration may vary depending on the application and required switching frequency. Consult the datasheet, application notes, and onsemi's gate drive design guides for more information.
  • To protect the MJD350G from overvoltage and overcurrent conditions, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These can include voltage regulators, zener diodes, and current sense resistors. Additionally, ensure proper PCB layout and component selection to minimize parasitic inductances and capacitances.
  • For optimal performance and reliability, follow good PCB design practices, such as minimizing trace lengths and widths, using a solid ground plane, and placing decoupling capacitors near the device. Ensure proper thermal vias and heat sink attachment. Consult the datasheet, application notes, and onsemi's PCB design guides for more information.

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MJD350G Overview

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